![[Translate to chinese:] Optical microscope image, which is a composition of both brightfield and fluorescence illumination, showing organic contamination on a wafer surface. The inset images in the upper left corner show the brightfield image (above) and fluorescence image (below with dark background). Organic_contamination_on_a_wafer_surface.jpg](/fileadmin/_processed_/a/1/csm_Organic_contamination_on_a_wafer_surface_622e92a7e7.jpg "[Translate to chinese:] Optical microscope image, which is a composition of both brightfield and fluorescence illumination, showing organic contamination on a wafer surface.")
随着半导体尺寸不断缩小，生产的集成电路（IC）芯片数量不断增加，在制造过程中，要达到质量标准，晶圆上的残留污染问题变得更为棘手。因此，在生产过程中保持晶圆清洁至关重要。
晶圆上的污染物可能是光刻胶残留、外来有机颗粒和液体、灰尘、纤维以及人的头发和皮肤。晶圆检测通常使用光学显微镜来进行，以便在生产过程中有效地观察到即使是很小的污染量。要观察有机污染，荧光显微镜相较于更常见的照明方法（如明场或暗场）具有优势。
本文介绍了荧光显微镜如何用于：
- 在晶圆质量控制（QC）中有效地可视化有机污染，从而缩短检查时间，提高通量，并改善半导体元件的质量。
- 可靠且快速地检测OLED（有机发光二极管）平板显示器的RGB阵列输出的质量。
通过利用包括荧光在内的多种对比和照明技术以及大范围的放大倍数，用户可以使用Leica显微镜（如DM8000 M、DM12000 M或DM6 M）来满足他们在晶圆和半导体材料的检查、QC、故障分析以及研发（R&D）方面的特定需求。
要阅读本文并了解更多信息，只需填写以下表格。
![[Translate to chinese:] Optical microscope image, which is a composition of both brightfield and fluorescence illumination, showing organic contamination on a wafer surface. The inset images in the upper left corner show the brightfield image (above) and fluorescence image (below with dark background).](/fileadmin/_processed_/a/1/csm_Organic_contamination_on_a_wafer_surface_7072894d1c.jpg "[Translate to chinese:] Optical microscope image, which is a composition of both brightfield and fluorescence illumination, showing organic contamination on a wafer surface.")
![[Translate to chinese:] Images of the same area of a processed wafer taken with standard (left) and oblique (right) brightfield illumination using a Leica compound microscope. The defect on the wafer surface is clearly more visible with oblique illumination.](/fileadmin/_processed_/9/1/csm_Processed_wafer_standard_and_oblique_brightfield_illumination_c01940e12e.jpg "[Translate to chinese:] Images of the same area of a processed wafer taken with standard (left) and oblique (right) brightfield illumination using a Leica compound microscope. The defect on the wafer surface is clearly more visible with oblique illuminati")
