显微镜不同观察方法下的快速半导体检测
利用光学显微镜揭示关键细节，在电子工业中高效可靠地进行半导体质量控制
![[Translate to chinese:] Images of the same area of a processed wafer taken with standard (left) and oblique (right) brightfield illumination using a Leica compound microscope. The defect on the wafer surface is clearly more visible with oblique illumination. Processed_wafer_standard_and_oblique_brightfield_illumination.jpg](/fileadmin/_processed_/9/1/csm_Processed_wafer_standard_and_oblique_brightfield_illumination_8925f72fc1.jpg "[Translate to chinese:] Images of the same area of a processed wafer taken with standard (left) and oblique (right) brightfield illumination using a Leica compound microscope. The defect on the wafer surface is clearly more visible with oblique illuminati")
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![[Translate to chinese:] Images of the same area of a processed wafer taken with standard (left) and oblique (right) brightfield illumination using a Leica compound microscope. The defect on the wafer surface is clearly more visible with oblique illumination.](/fileadmin/_processed_/9/1/csm_Processed_wafer_standard_and_oblique_brightfield_illumination_c01940e12e.jpg "[Translate to chinese:] Images of the same area of a processed wafer taken with standard (left) and oblique (right) brightfield illumination using a Leica compound microscope. The defect on the wafer surface is clearly more visible with oblique illuminati")
